Extending Universal Nodal Excitations Optimizes Superconductivity in Bi2Sr2CaCu2O8+δ
Identifieur interne : 005462 ( Main/Repository ); précédent : 005461; suivant : 005463Extending Universal Nodal Excitations Optimizes Superconductivity in Bi2Sr2CaCu2O8+δ
Auteurs : RBID : Pascal:09-0367420Descripteurs français
- Pascal (Inist)
- Supraconductivité, Cuprate, Dopage, Isolant Mott, Physique état solide, Microscopie tunnel balayage, Addition indium, Spectre énergie, Spectre excitation, Phosphure de gallium, Dépendance température, Transition supraconductrice, Température transition supraconductrice, Supraconducteur haute température, Bismuth Calcium Cuivre Strontium Oxyde Mixte, GaP, Bi2Sr2CaCu2O8+δ, 7472H.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
- Bismuth Calcium Copper Strontium Oxides Mixed, Cuprates, Doping, Energy spectra, Excitation spectrum, Gallium phosphide, High-Tc superconductors, Indium additions, Mott insulating, Scanning tunneling microscopy, Solid state physics, Superconducting transition temperature, Superconducting transitions, Superconductivity, Temperature dependence.
Abstract
Understanding the mechanism by which d wave superconductivity in the cuprates emerges and is optimized by doping the Mott insulator is one of the major outstanding problems in condensed-matter physics. Our high-resolution scanning tunneling microscopy measurements of the high-transition temperature (Tc) superconductor Bi2Sr2CaCu2O8+δ show that samples with different Tc values in the low doping regime follow a remarkably universal d wave low-energy excitation spectrum, indicating a doping-independent nodal gap. We demonstrate that Tc instead correlates with the fraction of the Fermi surface over which the samples exhibit the universal spectrum. Optimal Tc is achieved when all parts of the Fermi surface follow this universal behavior. Increasing the temperature above Tc turns the universal spectrum into an arc of gapless excitations, whereas overdoping breaks down the universal nodal behavior.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Extending Universal Nodal Excitations Optimizes Superconductivity in Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+δ</sub></title><author><name sortKey="Pushp, Aakash" uniqKey="Pushp A">Aakash Pushp</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Joseph Henry Laboratories and Department of Physics, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Illinois at Urbana-Champaign</s1><s2>Urbana, IL 61801</s2><s3>USA</s3><sZ>1 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Urbana, IL 61801</wicri:noRegion></affiliation></author><author><name sortKey="Parker, Colin V" uniqKey="Parker C">Colin V. Parker</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Joseph Henry Laboratories and Department of Physics, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Pasupathy, Abhay N" uniqKey="Pasupathy A">Abhay N. Pasupathy</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Joseph Henry Laboratories and Department of Physics, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Gomes, Kenjiro K" uniqKey="Gomes K">Kenjiro K. Gomes</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Joseph Henry Laboratories and Department of Physics, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Ono, Shimpei" uniqKey="Ono S">Shimpei Ono</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Central Research Institute of Electric Power Industry</s1><s2>Komae, Tokyo 201-8511</s2><s3>JPN</s3><sZ>5 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Central Research Institute of Electric Power Industry</wicri:noRegion></affiliation></author><author><name>JINSHENG WEN</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Condensed Matter Physics and Materials Science, Brookhaven National Laboratory (BNL)</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Upton, NY 11973</wicri:noRegion></affiliation></author><author><name>ZHIJUN XU</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Condensed Matter Physics and Materials Science, Brookhaven National Laboratory (BNL)</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Upton, NY 11973</wicri:noRegion></affiliation></author><author><name>GENDA GU</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Condensed Matter Physics and Materials Science, Brookhaven National Laboratory (BNL)</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Upton, NY 11973</wicri:noRegion></affiliation></author><author><name sortKey="Yazdani, Ali" uniqKey="Yazdani A">Ali Yazdani</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Joseph Henry Laboratories and Department of Physics, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0367420</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0367420 INIST</idno><idno type="RBID">Pascal:09-0367420</idno><idno type="wicri:Area/Main/Corpus">005111</idno><idno type="wicri:Area/Main/Repository">005462</idno></publicationStmt><seriesStmt><idno type="ISSN">0036-8075</idno><title level="j" type="abbreviated">Science : (Wash. D.C.)</title><title level="j" type="main">Science : (Washington, D.C.)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bismuth Calcium Copper Strontium Oxides Mixed</term><term>Cuprates</term><term>Doping</term><term>Energy spectra</term><term>Excitation spectrum</term><term>Gallium phosphide</term><term>High-Tc superconductors</term><term>Indium additions</term><term>Mott insulating</term><term>Scanning tunneling microscopy</term><term>Solid state physics</term><term>Superconducting transition temperature</term><term>Superconducting transitions</term><term>Superconductivity</term><term>Temperature dependence</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Supraconductivité</term><term>Cuprate</term><term>Dopage</term><term>Isolant Mott</term><term>Physique état solide</term><term>Microscopie tunnel balayage</term><term>Addition indium</term><term>Spectre énergie</term><term>Spectre excitation</term><term>Phosphure de gallium</term><term>Dépendance température</term><term>Transition supraconductrice</term><term>Température transition supraconductrice</term><term>Supraconducteur haute température</term><term>Bismuth Calcium Cuivre Strontium Oxyde Mixte</term><term>GaP</term><term>Bi2Sr2CaCu2O8+δ</term><term>7472H</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Understanding the mechanism by which d wave superconductivity in the cuprates emerges and is optimized by doping the Mott insulator is one of the major outstanding problems in condensed-matter physics. Our high-resolution scanning tunneling microscopy measurements of the high-transition temperature (T<sub>c</sub>) superconductor Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+δ</sub> show that samples with different T<sub>c</sub> values in the low doping regime follow a remarkably universal d wave low-energy excitation spectrum, indicating a doping-independent nodal gap. We demonstrate that T<sub>c</sub> instead correlates with the fraction of the Fermi surface over which the samples exhibit the universal spectrum. Optimal T<sub>c</sub> is achieved when all parts of the Fermi surface follow this universal behavior. Increasing the temperature above T<sub>c</sub> turns the universal spectrum into an arc of gapless excitations, whereas overdoping breaks down the universal nodal behavior.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0036-8075</s0></fA01><fA02 i1="01"><s0>SCIEAS</s0></fA02><fA03 i2="1"><s0>Science : (Wash. D.C.)</s0></fA03><fA05><s2>324</s2></fA05><fA06><s2>5935</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Extending Universal Nodal Excitations Optimizes Superconductivity in Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+δ</sub></s1></fA08><fA11 i1="01" i2="1"><s1>PUSHP (Aakash)</s1></fA11><fA11 i1="02" i2="1"><s1>PARKER (Colin V.)</s1></fA11><fA11 i1="03" i2="1"><s1>PASUPATHY (Abhay N.)</s1></fA11><fA11 i1="04" i2="1"><s1>GOMES (Kenjiro K.)</s1></fA11><fA11 i1="05" i2="1"><s1>ONO (Shimpei)</s1></fA11><fA11 i1="06" i2="1"><s1>JINSHENG WEN</s1></fA11><fA11 i1="07" i2="1"><s1>ZHIJUN XU</s1></fA11><fA11 i1="08" i2="1"><s1>GENDA GU</s1></fA11><fA11 i1="09" i2="1"><s1>YAZDANI (Ali)</s1></fA11><fA14 i1="01"><s1>Joseph Henry Laboratories and Department of Physics, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, University of Illinois at Urbana-Champaign</s1><s2>Urbana, IL 61801</s2><s3>USA</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Central Research Institute of Electric Power Industry</s1><s2>Komae, Tokyo 201-8511</s2><s3>JPN</s3><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Condensed Matter Physics and Materials Science, Brookhaven National Laboratory (BNL)</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>1689-1693</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>6040</s2><s5>354000187474780190</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>09-0367420</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Science : (Washington, D.C.)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fA99><s0>1/4 p. ref. et notes</s0></fA99><fC01 i1="01" l="ENG"><s0>Understanding the mechanism by which d wave superconductivity in the cuprates emerges and is optimized by doping the Mott insulator is one of the major outstanding problems in condensed-matter physics. Our high-resolution scanning tunneling microscopy measurements of the high-transition temperature (T<sub>c</sub>) superconductor Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+δ</sub> show that samples with different T<sub>c</sub> values in the low doping regime follow a remarkably universal d wave low-energy excitation spectrum, indicating a doping-independent nodal gap. We demonstrate that T<sub>c</sub> instead correlates with the fraction of the Fermi surface over which the samples exhibit the universal spectrum. Optimal T<sub>c</sub> is achieved when all parts of the Fermi surface follow this universal behavior. 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